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| BFP 182 NPN Silicon RF Transistor * For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA * fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182 RGs Q62702-F1396 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 325 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 69 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 182 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFP 182 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.27 0.27 0.6 - GHz pF 0.45 dB 1.2 1.9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms 21.5 - IC = 10 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma |S21e|2 17 11 15 - IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFP 182 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 3.4217 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 2.8263 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA V fF V eV K 0.039478 A 0.071955 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.89 0.73 0.4 0.15 0 0.42 189 15 187 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFP 182 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-12-1996 BFP 182 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.50 pF 10 GHz Ccb 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 fT 8 7 10V 5V 3V 6 5 4 3 2 1 0 4 8 12 16 V VR 22 0 5 10 15 mA 25 1V 0.7V 2V IC Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 23 dB 21 10V 8V 5V 3V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V 14 3V G 20 19 18 17 G 13 12 11 10 2V 2V 16 15 14 13 12 11 10 0 0.7V 5 10 15 mA 25 1V 9 8 1V 7 6 5 4 0 5 10 15 mA 25 0.7V IC IC Semiconductor Group 6 Dec-12-1996 BFP 182 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 24 VCE = Parameter, f = 900MHz 28 IC=10mA dB 0.9GHz dBm 24 8V 5V G 20 18 16 1.8GHz 14 12 10 8 6 0 2 4 6 8 V 12 IP 3 22 20 3V 2V 0.9GHz 18 16 14 12 10 1V 1.8GHz 8 6 4 2 0 0 5 10 15 mA 25 V CE IC Power Gain Gma, Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) VCE = Parameter 30 IC=10mA dB dB IC=10mA G S21 25 20 20 15 15 10 10V 2V 1V 0.7V 10 10V 1V 0.7V 5 5 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-12-1996 |
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